- 您现在的位置：买卖IC网 > Sheet目录512 > SI7170DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH 30V 40A PPAK 8SOIC
Si7170DP
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
30
33
- 6.4
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.4
2.6
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ?? 5 V, V GS = 10 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 15 A
V GS = 4.5 V, I D = 10 A
V DS = 15 V, I D = 15 A
0.0027
0.0036
90
0.0034
0.0043
?
S
Dynamic
b
Input Capacitance
C iss
4355
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
C oss
C rss
C rss /C iss
V DS = 15 V, V GS = 0 V, f = 1 MHz
595
256
0.056
0.120
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 15 V, V GS = 10 V, I D = 20 A
V DS = 15 V, V GS = 4.5 V, I D = 20 A
65
29
11.5
100
45
nC
Gate-Drain Charge
Q gd
7.5
Gate Resistance
R g
f = 1 MHz
0.2
0.55
1.0
?
Turn-On Delay Time
t d(on)
15
30
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 15 V, R L = 1.5 ?
I D ? 10 A, V GEN = 10 V, R g = 1 ?
10
35
20
65
Fall Time
Turn-On Delay Time
t f
t d(on)
8
36
16
65
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 15 V, R L = 1.5 ?
I D ? 10 A, V GEN = 4.5 V, R g = 1 ?
17
45
20
30
80
40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
40
70
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 3 A
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
0.74
34
29
17
17
1.1
65
55
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69981
S11-1650-Rev. C, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI7172DP-T1-GE3
MOSFET N-CH 200V 25A PPAK 8SOIC
SI7196DP-T1-E3
MOSFET N-CH D-S 30V PPAK 8SOIC
SI7216DN-T1-GE3
MOSFET DL N-CH 40V PPAK 1212-8
SI7222DN-T1-GE3
MOSFET N-CH D-S 40V 1212-8 PPAK
SI7228DN-T1-GE3
MOSFET N-CH 30V PWRPAK 1212-8
SI7230DN-T1-GE3
MOSFET N-CH 30V PWRPAK 1212-8
SI7272DP-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
SI7326DN-T1-GE3
MOSFET N-CH 30V PWRPAK 1212-8
相关代理商/技术参数
SI7172DP-T1-GE3
功能描述:MOSFET 200V 25A 96W 70mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7174DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 75-V (D-S) MOSFET
SI7174DP-T1-GE3
功能描述:MOSFET 75V 60A 104W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7178DP-T1-GE3
功能描述:MOSFET 100V 60A 104W 14mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7186DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 80-V (D-S) MOSFET
SI7186DP-T1-E3
功能描述:MOSFET 80V 32A 64W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7186DP-T1-GE3
功能描述:MOSFET 80V 32A 64W 12.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7190DP-T1-GE3
功能描述:MOSFET 250V 18.4A 96W 118mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube